基于TRIZ解决PECVD设备中SiN_(χ)在气路中的有害沉积

Resolution of Harmful Deposition of SiN_(χ) in Gas Path of PECVD Equipment Based on TRIZ

SiN_(χ)膜层作为太阳能电池的减反射膜起到了钝化和减反射的作用。在太阳能电池制备过程中,主要是利用PECVD(等离子体化学气相沉积)设备生长厚度为70~85 nm的SiN_(χ)膜层。然而,随着生产设备连续运行,SiN_(χ)将不断地沉积在特气孔上导致工艺腔室中反应气体均匀性变差,进而影响太阳能电池的转化效率。在实际生产过程中,PECVD设备连续运行约150 h,需要对设备进行约3-4 h的维护,从而降低了该设备的太阳能电池生产率,增加了太阳能电池成本。基于TRIZ理论,通过功能模型、因果分析对系统存在的问题进行了深入分析,进而利用矛盾矩阵获得众多方案。最终,将特气孔用液体隔离避免了SiN_(χ)的沉积,将PECVD设备的维护时间缩短到0.5 h,运行周期达1400 h,大大提高了设备生产率。

As the antireflection film of solar cell,SiN_(χ) layer plays the role of passivation and antireflection.In the process of solar cell production,the thickness of the SiN_(χ) can grow to be 70-85 nm with the help of PECVD equipment.However,with the continuous operation of PECVD equipment,the SiN_(χ) powder will continuously deposit on the stoma,resulting in the poor uniformity of reaction gas in the process chamber,which affects the conversion efficiency of solar cells.Based on TRIZ theory and through functional model and causality analysis,this paper analyzes the problems exsited in the system and get different solutions with the help of contradiction matrix.Finally,the pore is isolated with liquid to avoid the deposition of SiN_(χ) ,the maintenance time of PECVD equipment is reduced to 0.5 hour,and the operation cycle becomes 1400 hours,which greatly improves the productivity.