电流驱动凹槽磁纳米带内斯格明子的移动特性

Current-induced Skyrmion Motion in Magnetic Fluted Nanostripes

基于微磁学理论和模拟研究电流驱动的斯格明子的移动特性。相对于纳米带,凹槽纳米带可提供更大的边缘排斥力抑制斯格明子横向移动,最大驱动电流(J_(max))和最大斯格明子移动速度(V_(max))显著增加。随着注入电流密度的增加,凹槽纳米带内斯格明子移动速度先增加到最大速度,而后减小或保持不变。通过增加边缘宽度或厚度,J_(max)和V_(max)线性增加。研究凹槽纳米带边缘厚度与宽度对斯格明子移动的调制规律,并基于微磁学理论对其进行解释。为基于纳米带结构的自旋电子器件的开发提供理论依据。

Current-induced skyrmion motion is studied with theory and simulation of micromagnetism. Compared with those in the nanostripe, the maximum driving current density(J_(max)) and the maximum skyrmion speed(V_(max)) increase significantly in a fluted nanostripe structure which provides greater skyrmion-edge repulsion force to suppress transverse displacement of the skyrmion. As the driving current density increases, the skyrmion speed increases to V_(max), and then decreases or remains unchanged. As increasing the edge width or thickness, J_(max) and V_(max) increase linearly. We show dependence of the skyrmion speed on edge thickness and width in the fluted nanostripe and explain theoretically with micromagnetics. It provides guidance for the design and development of spintronic devices based on nanostripes.