气相合成法制备6N硫化镉多晶

Synthesis of 6N Polycrystalline Cadmium Sulfide via Vapor Phase

超高纯度的硫化镉(CdS)是Ⅱ-Ⅵ族中具有广泛应用的半导体材料,本文以6N硫、6N镉为原料,讲述了一种气相合成6N硫化镉多晶材料的工艺方法,分析了不同合成装置对合成效果的影响,探讨了气相合成硫化镉的工艺过程,包括硫蒸发室、镉蒸发室温度曲线的控制,硫蒸发室和镉蒸发室运载气体流量控制,以达到硫化镉最佳合成工艺条件。

Ultra-high purity cadmium sulfide(CdS)is a widely used semiconductor material in Ⅱ-Ⅵ group.In this article,6N polycrystalline cadmium sulfide was synthesized via vapor phase using 6N sulfur and 6N cadmium as raw materials.The effect of different synthesis devices,the process of vapor phase synthesis of cadmium sulfide including the control of the temperature curve of the sulfur evaporation chamber and the cadmium evaporation chamber,and the flow control of the carrier in the sulfur evaporation chamber and the cadmium evaporation chamber were discussed,so as to obtain the best synthesis process of cadmium sulfide.