西安200MeV质子应用装置200MeV质子辐照CCD的实验结果与分析

Charge Coupled Device Irradiated by 200 MeV Protonsat Xi’an 200 MeV Proton Application Facility

为评估CCD在高能质子辐照条件下的损伤效应,在西安200 MeV质子应用装置上开展了200 MeV质子辐照CCD的实验研究,在辐照注量为1×10^(10) cm^(-2)时,得到了CCD性能退化的实验结果,分析了CCD的暗信号、暗电流密度、随机噪声、暗信号不均匀性、暗信号尖峰及其分布等暗场特性参数和饱和输出、动态范围、电荷转移效率等明场特性参数退化的实验规律和损伤机理。结果表明,200 MeV质子辐照后,CCD暗场特性参数退化显著,退火后,暗场特性参数虽有一定程度的恢复,但远未恢复到辐照前的水平;明场特性参数的退化程度相对较小,退火后,明场特性参数略有恢复。CCD的质子辐照损伤主要源于质子辐照CCD诱发产生的电离损伤和位移损伤。

To evaluate the radiation effects on charge coupled device(CCD)induced by high energy protons,the experiments of CCD irradiated by 200 MeV protons with the radiation fluence of 1×10^(10) cm^(-2) are carried out at Xi’an 200 MeV Proton Application Facility(XiPAF).The dark characteristic parameters such as the dark signal,the dark current density,the random noise,the dark signal non-uniformity,and the dark signal spike and its distributions are analyzed.The experimental results show that the dark characteristic parameters are sensitive to proton irradiation and exhibit remarkable degradations.The annealing tests show that the dark field characteristic parameters recover to a certain extent,but far from the level before irradiation.In contrast to the dark characteristic parameters,the illumination characteristic parameters is relatively small and recover slightly after annealing.The radiation damage mechanisms are also demonstrated.The CCD radiation damages induced by protons are mainly due to the proton ionization damages and the proton displacement damages.