摘要
利用密度泛函理论研究了NH_(3)在完整和含有缺陷的硼纳米管上的吸附行为以及相关电子性质.计算结果表明,对于α硼纳米管,在不同的直径和手性条件下,NH_(3)均倾向于吸附在配位数为6的顶位上.电子结构计算结果表明,NH_(3)能够吸附在纳米管表面主要是由于N和B原子产生了较强的相互作用.表明硼纳米管是一种潜在的NH_(3)气气敏材料.
The adsorption behavior and related electronic properties of NH_(3)on perfect and defective boron nanotubes were investigated via density functional theory.The results show that for α-type boron nanotubes,NH_(3) is more likely to be adsorbed at the top position with the coordination number of 6 under different diame⁃tral and chiral conditions.The electronic structure calculation results show that the strong interaction between N and B atoms is the dominant reason for the stably adsorption of NH_(3) on the surface of boron nanotubes.It in⁃dicates that boron nanotubes are one of the potential NH_(3) gas sensitive materials.
作者
刘昌辉
梁国俊
李妍璐
程秀凤
赵显
LIU Changhui;LIANG Guojun;LI Yanlu;CHENG Xiufeng;ZHAO Xian(Institute of Crystal Matierials,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Center for Optics Research and Engineering,Shandong University,Qingdao 266237,China)
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2021年第7期2263-2270,共8页
Chemical Journal of Chinese Universities
关键词
密度泛函理论
氨气
硼纳米管
吸附
Density functional theory
NH_(3)
Boron nanotube
Adsorption