碳化硅功率器件中的金属半导体接触工艺研究

Study on Metal Semiconductor Contact Process in SiC Power Devices

分析碳化硅肖特基接触工艺和欧姆接触工艺技术发展历程,目前存在的问题。碳化硅肖特基接触工艺的发展特征是低势垒高度金属逐渐替代高势垒高度金属,研究发现这与器件应用场景的进化和碳化硅工艺技术水平的发展直接相关。随着更多器件结构设计的引入,碳化硅P型欧姆接触已经变得和N型欧姆接触同等重要。阐述碳化硅金属半导体接触工艺未来优化的方向。

The development of SiC Schottky contact process and Ohmic contact process as well as the existing problems are analyzed and discussed in this paper. The lower Schottky barrier height metals are becoming more and more popular than higher Schottky barrier height metal, which is caused by the evolution of the real application and the development of SiC process capability. The SiC P type Ohmic contact now is as same important as the N type Ohmic contact due to the development of device design. Moreover, one direction of SiC contact process optimization in the future is proposed.