多线切割工艺对单晶锗损伤层及几何参数的影响

Effects of Multi-wire Sawing Process on the Damage Layer and Geometric Parameters of the Single Crystal Germanium

本工作集中研究磨料粒径、进给速度及切割线径对单晶锗片损伤层及几何参数的影响。结果表明:在切割过程中,磨料粒径与锗片损伤层深度及表面粗糙度呈正比关系,采用3000#磨料切割时,损伤层深度为6μm,表面粗糙度为0.285μm;进给速度的降低会降低锗棒在切割过程中的温度变化,从而降低锗片的几何参数;采用3000#碳化硅微粉,100μm/min进给速度,0.09 mm切割线的切割工艺,能够获得表面质量优异、几何参数小、切割损耗小的锗片。

The research is concentrated on effects of the size of abrasive particles,feeding speed and the diameter of wire on the damage layer and geometric parameters of the single crystal germanium.The results show that the damage layer and the roughness increase with the size of abrasive particles during the sawing.The depth of damage layer reaches 6μm and the roughness reaches 0.285μm when use 3000#abrasive particles during sawing;Temperature variation during sawing can be reduced by reducing the feeding speed which can reduce the geometric parameters of the germanium wafer;High quality surface,less geometric parameters and loss can be obtained by using 3000#abrasive particles,feeding speed of 100μm/min and wire of 0.09 mm in diameter.