摘要
利用磁控溅射和旋涂法在普通硼硅玻璃上制备了AZO/AgNWs/AZO复合透明导电薄膜。利用XRD对AZO/AgNWs/AZO的结晶性进行测定,发现复合薄膜结晶质量良好;通过SEM观察到AgNWs网络均匀地分布在AZO层之间,形成透明的导电薄膜。运用紫外分光光度计、四探针测试仪等仪器对薄膜的透过率和方阻进行了系统的研究。结果发现,随着旋涂次数的增加,样品的透过率和方阻均呈下降趋势,中间层AgNWs旋涂3层时,薄膜质量因子最高,达到8.3×10-3Ω-1,透过率为77.154%,方阻仅8.9Ω/sq.,此外,在电流的耐受性测试中,复合薄膜表现出比纯AgNWs薄膜更好的电流耐受性;在环境稳定性测试中,复合薄膜在空气中放置15天后,方阻仅增长了0.13倍,而纯AgNWs薄膜增长了5.2倍。
AZO/AgNWs/AZO composite transparent conductive films were prepared on borosilicate glass by magnetron sputtering and spin coating.The crystallization of AZO/AgNWs/AZO was determined by XRD,and the crystallization quality of the composite film was found to be good.It was observed by SEM that the AgNWs network was uniformly distributed between AZO layers in the composite film,forming transparent conductive film.The transmittance and the square resistance of the film were systematically studied by ultraviolet spectrophotometer and four-probe square resistance meter.Results show that with the increase of the number of spin,sheet resistance and transmittance of samples are gradually reduced,the middle tier spin on AgNWs,3 layer transmittance was 77.154%,the sheet resistance of only 8.9Ω/sq.,film quality factor of 8.3×10-3Ω-1.In the current tolerance test,AZO/AgNWs/AZO composite films showed higher current tolerance than pure AgNWs films.In the environmental stability test,the square resistance of the composite film only increased by 0.13 times after being placed in air for 15 days,while the square resistance of the pure AgNWs film increased by 5.2 times.
作者
王鹏飞
陈义川
胡跃辉
高皓
刘辉文
高友良
WANG Pengfei;CHEN Yichuan;HU Yuehui;GAO Hao;LIU Huiwen;GAO Youliang(School of Mechanical and Electrical Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333403,China)
出处
《中国陶瓷》
CAS
CSCD
北大核心
2021年第6期38-42,55,共6页
China Ceramics
基金
江西省重点研发计划项目(20192BBE50056,20171BBE50053)
江西省自然科学基金项目(20202BAB202011)
江西省教育厅科技项目(J7078,J60872,J00213)
江西省青年科学基金(20192BAB217012)。