摘要
The modulation of electrical properties of MoS_2 has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices.Herein,interfacial charge transfer induced electronic property tuning of MoS_2 are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements.A downward band-bending of MoS_2-related electronic states along with the decreasing work function,which are induced by the electron transfer from Cs overlayers to MoS_2,is observed after the functionalization of MoS_2 with Cs,leading to n-type doping.Meanwhile,when MoS_2 is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane(F_4-TCNQ),an upward band-bending of MoS_2-related electronic states along with the increasing work function is observed at the interfaces.This is attributed to the electron depletion within MoS_2 due to the strong electron withdrawing property of F_4-TCNQ,indicating p-type doping of MoS_2.Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS_2 and paves the way to optimize its performance in electronic and optoelectronic devices.
作者
周思含
周春伟
杨向东
李阳
钟建强
毛宏颖
Si-Han Zhou;Chun-Wei Zhou;Xiang-Dong Yang;Yang Li;Jian-Qiang Zhong;Hong-Ying Mao(Department of Physics,Hangzhou Normal University,Hangzhou 311121,China)
基金
Supported by the National Natural Science Foundation of China (Grant No.22002031)
the Natural Science Foundation of Zhejiang Province (Grant No.LY18F010019)
the Innovation Project in Hangzhou for Returned Scholar。