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金属硫族簇基半导体中的Mn^(2+)发光 被引量:2

Luminescence of Mn^(2+) in Metal Chalcogenide Cluster-based Semiconductors
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摘要 锰离子相对稳定的发光特性及锰掺杂荧光粉的成功使得人们对锰离子发光的研究热情不减。本文综述了Mn^(2+)掺杂金属硫族簇基半导体中团簇结构、组分关联的Mn^(2+)发光特性。金属硫族簇基半导体具有原子级的精确结构,为探究Mn^(2+)发光的精确“构效关系”提供了理想模型。在Mn^(2+)掺杂的金属硫族簇基半导体中,Mn^(2+)附近键长和团簇组装方式的差异决定了Mn^(2+)配位场强的变化,进而影响Mn^(2+)发光波长的变化。在Mn^(2+)掺杂的金属硫族纳米团簇中,Mn^(2+)的聚集形式和聚集体中Mn^(2+)的数量决定了Mn-Mn耦合相互作用的大小,直接影响Mn^(2+)发光效率、寿命及激发特性。 The relatively stable luminescence properties of manganese ions and the success of manganese doped phosphors benefit the continuous study on the luminescence properties of manganese ions.In this paper,cluster structures and component-related luminescence properties of Mn^(2+) ions in the Mn^(2+) doped metal chalcogenide cluster-based semiconductors are reviewed.Metal chalcogenide cluster-based semiconductors with precisely structure in atomic level,provide an ideal model for exploring the precise“structure-property relationship”corresponding to the luminescence of Mn^(2+) ions.In the Mn^(2+) doped metal chalcogenide cluster-based semiconductors,the difference of bond length near Mn^(2+) ions and the assembly mode of clusters determine the change of Mn^(2+) coordination field intensity,further affect the change of Mn^(2+) ion emission wavelength.In the Mn^(2+) doped metal chalcogenide nanoclusters,the aggregation form of Mn^(2+) ions and the number of Mn^(2+) ions in the aggregate determine the magnitude of Mn-Mn coupling interactions,which directly affect the luminescence efficiency,lifetime,and excitation characteristics of Mn^(2+) ions.
作者 林坚 陈德睢 沈家辉 曾培勇 LIN Jian;CHEN De-sui;SHEN Jia-hui;ZENG Pei-yong(School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;Zhejiang Key Laboratory for Excited-state Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China)
出处 《发光学报》 EI CAS CSCD 北大核心 2021年第7期953-975,共23页 Chinese Journal of Luminescence
基金 国家自然科学基金(22001187) 江苏省高等学校自然科学研究项目(20KJB150032)资助。
关键词 金属硫族化合物 锰掺杂 半导体 metal chalcogenides manganese doping semiconductor
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