808 nm半导体激光芯片波导优化与效率特性分析

Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes

对808 nm的InAlGaAs/AlGaAs半导体激光器芯片的波导厚度进行了优化,研究发现N波导与P波导厚度比值为1.8时芯片电光转换效率最高。基于上述高效率芯片研制出Chip-on-submount(COS)单管和光纤芯径62.5μm、数值孔径0.22的光纤耦合模块,并研究了两种器件在-10~90℃范围内的效率特性。结果显示,温度由-10℃升高到90℃,COS单管的载流子泄漏占比由1.18%增加到16.67%,光纤耦合模块的载流子泄漏占比由1.99%增加到17.73%,表明温升引起的载流子泄漏加剧是导致电光转换效率降低的主要因素。此外,还研究了高温老炼、热真空、空间辐照对光纤耦合模块电光转换效率的影响,并揭示了导致器件电光转换效率降低的内在因素。

The waveguide thickness of 808 nm InAlGaAs/AlGaAs laser diode chip was optimized in this paper.The study found that when the thickness ratio of the N-waveguide to the P-waveguide was 1.8,the chip had the highest power conversion efficiency.Chip-on-submount(COS)packaged single emitters and fiber-coupled modules@core diameter 62.5μm,numerical aperture(NA)0.22 were presented based on this conclusion,and the efficiency characteristic of the devices in the range of-10-90℃was analyzed.The results showed that when the temperature increased from-10 to 90℃,the carrier leakage ratio of COS single emitter increased from 1.18%to 16.67%,and the carrier leakage ratio of fiber-coupled module increased from 1.99%to 17.73%,indicating that the increase of carrier leakage caused by temperature rise was the main factor leading to the decrease of power conversion efficiency.Moreover,the effects of high-temperature aging,thermal vacuum conditions and space radiation on the power conversion efficiency of fiber-coupled module were studied and the internal factors that lead to the reduction of the device's power conversion efficiency were revealed.