摘要
极紫外光刻(EUVL)是实现22 nm及以下节点集成电路制造最为高效的工艺技术。本文介绍了EUV光刻胶树脂的结构特点及其对光刻性能的影响,并着重整理了近年来化学增幅型和非化学增幅型EUV光刻胶树脂的合成方法。最后,对EUV光刻胶树脂的结构设计进行了分析与展望。
Extreme ultraviolet lithography(EUVL)has become the most productive technology to achieve the manufacturing of integrated circuit at 22 nm node and beyond.In this paper,the structural characteristics of the EUV photoresist resins and their effects on photolithographic properties were introduced.Based on the structures and synthesis methods of photoresists,the polymeric synthesis methods of chemically and non-chemically amplified EUV resists were mainly reviewed.Finally,the direction of structural design for EUV photoresist in the future was forecasted.
作者
文帅
刘强
WEN Shuai;LIU Qiang(Key Laboratory of Rubber-Plastics of Ministry of Education,Qingdao University of Science&Technology,Qingdao 266042,Shandong,P.R.China)
出处
《影像科学与光化学》
CAS
北大核心
2021年第4期504-511,共8页
Imaging Science and Photochemistry
基金
山东省腐蚀科学重点实验室开放课题(KLCS201908)资助。
关键词
光刻胶树脂
极紫外光刻
合成
改性
photoresist resin
extreme ultraviolet lithography
synthesis
modification
