TSV等效电路模型建立及分析

Establishment and Analysis of TSV Equivalent Circuit Model

硅通孔技术(TSV)是一种实现三维集成电路的方法。为了加快三维集成电路的制造测试速度,必须对TSV结构精确建模。该文提出了一种利用CAD工具提取TSV电路模型的方法。通过三维全波模拟,可揭示常见的TSV参数和故障对TSV电路模型的影响。该文方法所提取的模型表明,衬底电导率对TSV故障的表征有较大的影响,相对较大的针洞不会改变TSV特征参数。

Through Silicon Via(TSV)is a technology for realizing three-dimensional integrated circuits.In order to speed up the manufacturing and testing speed of 3D integrated circuits,TSV must be accurately modeled.This paper presents a method to extract TSV circuit model using CAD tools.Through the three-dimensional full-wave simulation,the influence of common TSV parameters and faults on the TSV circuit model is revealed.The extracted model shows that the substrate conductivity has a greater impact on the characterization of TSV faults,and relatively large pinholes will not change the TSV characteristic parameters.