摘要
We prepared 300-nm GeTe thin films on(111)-oriented and piezoelectrically active 0.71 Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.29PbTiO_(3)(PMN-0.29 PT)single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180ferroelastic domain switching of the PMN-0.29 PT on the electronic properties of the GeTe films.The in-plane strain of the PMN-0.29 PT could be modulated continuously and reversibly by electric fields in a nonvolatile manner and could be effectively transferred to the GeTe films.Based on this,we realized reversible and nonvolatile resistance switching and obtained multilevel stable nonvolatile resistance states with good stability and endurance at T=300 K by applying appropriate asymmetrical bipolar electric fields to the PMN-0.29 PT(111)substrates along the thickness direction.Such heterostructures may be used for multilevel data storage that allows each unit to store multiple bits of information and thus improve the memory density.Our investigation would be beneficial for the fabrication of nonvolatile memory devices using PMN-xPT-based heterostructures.
基金
the National Natural Science Foundation of China(Grant Nos.51572278,51790491,11574126,51872278)
the National Basic Research Programof China(Grant Nos.2016YFA0300103 and 2015CB921201)
Support from Jiangxi Key Laboratory for Two-Dimensional Materials and Jiangxi Engineering Laboratory for Thin Films and Devices is also acknowledged.
