Topology paving the way to controllable readout of ferroelectricity dself-assembled topologically confined domain walls become the key to ferroelectric memory

Ferroelectric materials are long believed to be useful in informationtechnology. As early as 1952, the concept of ferroelectricrandom-access memory (FeRAM) had already been proposed byMr. Dudley Allen Buck, who was by then only a graduate student[1]. However, after more than sixty years, the application of FeRAMis still limited. One major obstacle hindering the development ofFeRAM is the readout of ferroelectric polarization, which is generallydestructive, i.e. it requires a write-after-read architecture, justlike standard dynamic random-access memory (DRAM) capacitorcells.