单电子晶体管通断图及其分析

Stability diagrams for single-electron transistors

通过研究单电子晶体管在电路中的静电能量的变化 ,得到了它的阻塞、导通情况与其两端偏压和控制栅压之间的关系 ,从而给出了它的通断图 .并且发现单电子晶体管的对外特性主要由其对外的总电容决定 ;而单电子岛两个隧道结电容的不同主要反映在通断图上由隧道结电容所决定的晶体管阻塞、导通边界线上 。

Based on an equivalent circuit for single-electron transistors, the electrostatic energy on the charges is deduced. The transistor can be either at Coulomb blockade or conducting under various gate voltages and bias voltages along the single-electron transistor. Its stability diagrams are given and discussed.