一种平衡式GaN内匹配宽带功率放大器设计

Design of a Balanced GaN Internally Matched Broadband Power Amplifier

基于南京电子器件研究所的0.5μm GaN HEMT工艺平台,研制了一款2~5 GHz宽带固态功率放大器。采用低通L-C匹配网络消除虚部阻抗,并利用λ/4线实现宽带实阻抗到目标阻抗50Ω的匹配,最后通过3 dB Lange耦合器实现宽带平衡式功率合成设计。测试结果表明,功放在48 V漏电压、1 ms周期、10%射频脉冲时,在2~5GHz频带内,输出功率大于50 dBm(100 W),最高输出功率达到51.2 dBm(132 W),最大功率附加效率52%,合成效率典型值大于85%,二次谐波抑制度大于18 dBc,杂波抑制度大于60 dBc。

Based on 0.5 μm GaN HEMT process platform of Nanjing Electronic Devices Institute,a 2~5 GHz broadband solid-state power amplifier was developed. Low pass L-C matching network was used to eliminate imaginary part impedance,and a 1/4 impedance converter was used to achieve broadband real impedance to target impedance 50 Ω.The balanced power synthesis design was realized by 3 dB Lange coupler. The test results show that in the 2~5 GHz frequency band,under48 V leakage voltage,1 ms cycle and 10% RF pulse,the output power of the power amplifier is more than 50 dBm(100 W),the maximum output power is 51.2 dBm(132 W),the maximum PAE is52%,the typical synthetic efficiency is more than 85%,the second harmonic suppression is more than 18 dBc,and the clutter suppression is more than 60 dBc.