摘要
ONO(Oxide-Nitride-Oxide)反熔丝器件具有可靠性高、抗辐射、高开关比等优异特性,一直用于抗辐射可编程逻辑器件。基于0.6μm CMOS工艺,分别采用“AF+MOS”和“MOS+AF”集成方法成功制备了ONO反熔丝器件,研究了ONO反熔丝阵列单元编程特性、导通电阻与编程电流以及编程时间之间的关系,同时对两种典型编程通路的编程特性进行特征化表征,考察了反熔丝单元编程前后的电应力可靠性。研究结果表明,采用“AF+MOS”集成方法制备的ONO反熔丝器件具有优良的击穿均匀性和编程特性。
ONO anti-fuse devices have been widely used in programmable logic devices because of its high reliability,radiation resistance and high switching ratio.The programming characteristics of ONO anti-fuse array elements fabricated in 0.6μm"AF+MOS"and"MOS+AF"processes are investigated.The relationship between the resistance of ONO anti-fuse devices and the programming current and time is studied.Meanwhile,two typical programming paths are characterized.The electrical stress reliability of the anti-fuse cells before and after programming is investigated.The results show that the ONO anti-fuse devices fabricated by an"AF+MOS"integration method have excellent breakdown uniformity and programming characteristics.
作者
潘福跃
张明新
曹利超
刘佰清
洪根深
张海良
刘国柱
PAN Fuyue;ZHANG Mingxin;CAO Lichao;LIU Baiqing;HONG Genshen;ZHANG Hailiang;LIU Guozhu(The 58th Research Institute,CETC,Wuxi 214072,China;School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China)
出处
《电子与封装》
2021年第7期77-82,共6页
Electronics & Packaging
关键词
ONO
反熔丝
击穿电压
导通电阻
ONO
anti-fuse devices
breakdown voltage
on-state resistance
