Tunable quantum Shubnikov-de Hass oscillations in antiferromagnetic topological semimetal Mn-doped Cd_(3)As_(2)

Three-dimensional Dirac semimetal Cd_(3)As_(2)has been considered as an excellent candidate for applications of electronic devices owing to its ultrahigh mobility and air-stability.However,current researches are focused mainly on the use of gate-voltage to control its carrier transport tunability,while the manipulation of transport properties by element-doping is quite limited.Here we report the tunable magneto-transport properties by adjusting Mn-doping in the Cd_(3)As_(2)compound.We find that Mnelement doping has a strong influence on the Fermi level positions,and the Fermi energy approaches to Dirac point with higher Mn-doping.More importantly,the introduction of Mn atoms transforms diamagnetic Cd_(3)As_(2)to anti ferromagnetic(Cd,Mn)_(3)As_(2),which provides an approach to control topological protected Dirac materials by ma nipulating antiferro magnetic order parameters.The Shubnikov-de Hass oscillation originates from the surface states,and the Landau fan diagram yields a nontrivial Berry phase,indicating the existence of massless Dirac fermions in the(Cd_(1-x)Mn_x)_(3)AS_(2)compounds.Our present results may pave a way for further investigating anti ferromagnetic topological Dirac semimetal and expand the potential applications in optoelectronics and spintronics.