Si、Si-Fe合金助熔法制备SiC研究

Study on the SiC growth from Si and Si-Fe alloy

助熔剂法是一种高效生长SiC晶体的方法。本文采用助溶剂法对比考察了Si、Si-Fe合金熔体中SiC晶体生长行为特征,并结合光学显微镜以及电子显微探针对SiC晶体进行分析。研究发现,Si、Si-Fe合金熔体中SiC晶体均以SLS机制生长,受C在两种介质中溶解度的影响,Si熔体中SiC析出尺寸较小,10~50μm,排列成线状分布在样品外侧;Si-Fe熔体中SiC晶体析出尺寸较大,50~200μm,分散在样品中。

The characteristics of SiC crystal growth from Si and Si-Fe alloy melts are investigated with the help of optical microscope and electron probe micro-analysis.It is found that the SiC crystals growth from Si and Si-Fe alloy melts follows the SLS mechanism.Influenced by the solubility of C in the two Si-based melts,the size of SiC crystals in Si melts is small,ranging from 10μm to 50μm,which precipitates in a line in the outer region of the sample.The size of SiC crystals in Si-Fe is large,ranging from 50μm to 200μm,which disperses in the whole sample.