摘要
设计了一种基于0.25μm GaAs p-HEMT工艺的低插损6位数字衰减器。采用Pi型衰减结构与T型衰减结构级联的方式,实现低插入损耗和高衰减精度。采用相移补偿电路减小附加相移,采用幅度补偿电路提高衰减精度。仿真结果表明,在7~13GHz范围内,该数字衰减器的RMS幅度误差小于0.5dB,插入损耗小于5.6dB,10GHz时1dB压缩点的输入功率约为29dBm,附加相移为-7°~+6.5°,输入输出回波损耗小于-11dB。芯片尺寸为2.50mm×0.63mm。
A six-bit digital attenuator with low insertion loss was designed in a 0.25μm GaAs p-HEMT process.The Pi-type attenuation structure and the T-type attenuation structure were cascaded to achieve low insertion loss and high attenuation accuracy.The phase shift compensation circuit was used to reduce the additional phase shift,and the amplitude compensation circuit was used to improve the attenuation accuracy.The simulation results showed that the RMS amplitude error was less than 0.5dB,and the insertion loss was less than 5.6dB in the range of 7~13GHz.The input 1dB compression point was about 29dBm at 10GHz,the additional phase shift was-7°~+6.5°,and the input/output return loss was less than-11dB.The chip area was 2.50 mm×0.63mm.
作者
翟英慧
万晶
林福江
叶甜春
阎跃鹏
梁晓新
ZHAI Yinghui;WAN Jing;LIN Fujiang;YE Tianchun;YAN Yuepeng;LIANG Xiaoxin(Micro-Nano Electronic System Integration Center,Univ.of Science and Technology of China,Hefei 230026,P.R.China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,P.R.China;Beijing Key Laboratory of New Generation Communication RF Chip Technology,Beijing 100029,P.R.China)
出处
《微电子学》
CAS
北大核心
2021年第3期324-329,共6页
Microelectronics
关键词
数字衰减器
低插入损耗
级联结构
补偿电路
digital attenuator
low insertion loss
cascade structure
compensation circuit
