先进MOSFET中1/f噪声研究进展

Research Progress of 1/f Noise Charateristics in Advanced MOSFETs

全面综述了先进金属氧化物半导体场效应晶体管(MOSFET)的1/f噪声研究进展。界面态、器件结构、材料缺陷、量子效应等诸多因素均会影响1/f噪声。随着工艺尺寸的持续缩小和高k介质材料的应用,以及热载流子效应、辐照损伤等因素的影响,MOSFET的1/f噪声起源问题一直是学术界具有较大分歧和争议的课题。只有澄清了1/f噪声的真正物理起源,才能有效通过工艺加以改善,支撑设计应用。

A comprehensive review of the 1/fnoise research progress in advanced Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFET)was presented.Interfacial states,device structure,material defects,quantum effects and many other factors could affect 1/f noise.With the continuous reduction of process size and the application of high kdielectric,as well as the influence of hot carrier effect,radiation damage and other factors,the origin of 1/fnoise in MOSFET had been a huge disagreement and controversy in the academic circle.Only when the real physical origin of 1/fnoise was clarified,could it be effectively improved through the process to support the design application.