摘要
功率MOSFET作为开关器件时,导通电阻的平坦度是衡量其性能的重要参数。研究影响导通电阻平坦度的因素,并对其进行优化,有助于改善器件的性能。低压UMOS中,沟道电阻是导通电阻的主要部分。文章以沟道电阻为分析对象,利用公式分析影响因素,通过Sentaurus TCAD仿真验证了导通电阻平坦度的变化趋势。通过改变P型基区离子注入剂量和栅氧层厚度进行仿真。仿真结果表明,通过减小栅氧层厚度和减少P型基区注入剂量,可获得较好的导通电阻平坦度。
The flatness of on-resistance is an important performance of the power device when it is used as a switching device.The factors which have considerable influences on the flatness of on-resistance have been studied and optimized to improve the performances of the device.The specific channel resistance is a major part of onresistance for the UMOS with a low breakdown voltage.Therefore,the computed equation of the channel resistance was given and analyzed in this paper.The trends of the on-resistance flatness were investigated with the P-base implant dose and the gate oxide thickness using Sentaurus TCAD simulation.The simulation results showed that a better flatness of on-resistance could be obtained by reducing the gate oxide thickness and the implant dose of P-base region.
作者
周熹
冯全源
ZHOU Xi;FENG Quanyuan(Institute of Microelectronics,Southwest Jiaotong University,Chengdu 611756,P.R.China)
出处
《微电子学》
CAS
北大核心
2021年第3期424-428,共5页
Microelectronics
基金
国家自然科学基金重点项目(61531016,61831017)
四川省科技支撑计划重点项目(2018GZ0139)
四川省重大科技专项项目(2018GZDZX0001)。
关键词
导通电阻
沟道电阻
杂质浓度
迁移率
栅氧层
on-resistance
channel resistance
impurity concentration
mobility
gate oxide
