摘要
The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.
作者
Peng Liu
Ji-Long Hao
Sheng-Kai Wang
Nan-Nan You
Qin-Yu Hu
Qian Zhang
Yun Bai
Xin-Yu Liu
刘鹏;郝继龙;王盛凯;尤楠楠;胡钦宇;张倩;白云;刘新宇(Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
基金
the General Program of the National Natural Science Foundation of China(Grant No.61974159)
the Youth Innovation Promotion Association of the Chinese Academy of Sciences and Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20200039)。
