Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

The various advantages of extended-source(ES),broken gate(BG),and hetero-gate-dielectric(HGD)technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET)in order to enhance the direct-current and analog/radio-frequency performance.The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction,and then,the on-state current for the ESBG TFET increases.The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail.The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013,large transconductance of 1200μS/μm,high cut-off frequency of 72.8 GHz,and high gain bandwidth product of 14.3 GHz.Apart from these parameters,the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second-and third-order voltage intercept points,the third-order input interception point,and the third-order intermodulation distortion.Therefore,the ESBG TFET greatly promotes the application potential of conventional TFETs.