Theory and Practice of“Striping”for Improved ON/OFF Ratio in Carbon Nanonet Thin Film Transistors

A new technique to reduce the influence of metallic carbon nanotubes(CNTs)relevant for large-scale integrated circuits based on CNT-nanonet transistorsis proposed and verified.Historically,electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors;however,the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory.Here,we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called“striping”;this allows fabrication of transistors with ON/OFF ratio>1000 and ON-current degradation no more than a factor of 2.We offer first principle numerical models,experimental confirmation,and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.