辉光放电质谱法定量测定重掺晶体硅中替位碳含量

Determination of Carbon Substitution in Heavily Doped Silicon by Glow Discharge Mass Spectrometry

采用辉光放电质谱法测定单晶硅中替位碳含量,通过优化仪器工作条件,得到最佳放电参数。利用低温傅里叶变换红外光谱法对呈梯度的四个单晶硅片中替位碳含量进行赋值,将辉光放电质谱法测得替位碳强度与硅的离子束比与赋值结果作工作曲线,计算得到相对灵敏度因子(RSFcal)为1.19。在优化过的工作条件下,用辉光放电质谱法测未知样,用RSFcal进行计算,得到单晶硅中替位碳的定量分析结果,与二次离子质谱(SIMS)法测定结果进行对照,相对误差为3.7%,一致性较好。

The substitution carbon content in monocrystalline silicon was determined by glow discharge mass spectrometry.The optimum discharge parameters were obtained by optimizing the working conditions of the instrument.The substitution carbon content in four single crystal silicon wafers was evaluated by low temperature Fourier transform infrared spectrometer.The ion beam ratio and content of C and Si measured by glow discharge mass spectrometer were used as the working curve,and the accurate relative sensitivity factor was calculated to be 1.19.Under the optimized working conditions,the unknown sample was measured by glow discharge mass spectrometry,and the RSFcal was used to calculate the quantitative analysis results of the substituted carbon in monocrystalline silicon.Compared with the results of SIMS,the relative error was 3.7%,and the consistency was good.