摘要
Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many years,and a number of novel nanowire-based devices have been demonstrated.Full control of the epitaxial growth is required to optimize the performance of devices,and gold seed particles are known to provide the most controlled growth.Successful nanowire growth from gold particles generated and deposited by various different methods has been reported,but no investigation has yet been performed to compare the effects of gold particle generation and deposition methods on nanowire growth.In this article we present a direct comparative study of the effect of the gold particle creation and deposition methods on nanowire growth characteristics and nanowire crystal structure,and investigate the limitations of the different generation and deposition methods used.
基金
This work was performed within the Nanometer Structure Consortium at Lund University and supported by the Swedish Research Council(VR),the Swedish Foundation for Strategic Research(SSF),the EU program AMON-RA(No.214814)
the Knut and Alice Wallenberg Foundation.
