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Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI 被引量:1

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摘要 The Rashba effect plays a vital role in electronic structures and related functional properties.The strength of the Rashba effect can be measured by the Rashba parameter α_(R);it is desirable to manipulate α_(R) to control the functional properties.The current work illustrates how α_(R) can be systematically tuned by doping,taking BiTeI as an example.
出处 《npj Computational Materials》 SCIE EI CSCD 2020年第1期774-780,共7页 计算材料学(英文)
基金 This work was supported by the National Key Research and Development Program of China(Nos.2017YFB0701600,2018YFB0703600) the Natural Science Foundation of China(Grant Nos.51632005,11604200,11674211,and 51761135127) the 111 Project D16002 W.Z.also acknowledges the support from the Guangdong Innovation Research Team Project(No.2017ZT07C062) Guangdong Provincial Key-Lab program(No.2019B030301001) Shenzhen Municipal Key-Lab program(ZDSYS20190902092905285) Shenzhen Pengcheng-Scholarship Program J.Y.acknowledges the financial support of the US National Science Foundation with award number 1915933.
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