摘要
Zhiping Zhou,Bing Yinand Jurgen Michel Light:Science&Applications(2016)5,e16098;doi:10.1038/lsa.2016.98;published online 22April 2016 Correctionto:Light:Science&Applications(2015)4,e358;doi:10.1038/lsa.2015.131;published online20 November 2015 In the version of this article originally published,the substrate used in reference 111 to grow InAs/GaAs quantum dots was silicon.However,the authors have found out that 500 nm of germanium was first grown on silicon by chemical vapor deposition before growing InAs/GaAs quantum dots.Therefore,the InAs/GaAs quantum dots reported in reference 111 are actually grown on Ge-on-Si substrate.Therefore,1.In Table 2,the substrate of reference 111 should be‘Ge-on-Si’instead of‘Si’.
