摘要
Going through decades of development,great progress in both theory and experiment has been achieved in thermoelectric materials.With the growing enhancement in thermoelectric performance,it is also companied with the complexation of defects induced in the materials.0D point defects,1D linear defects,2D planar defects,and 3D bulk defects have all been induced in thermoelectric materials for the optimization of thermoelectric performance.Considering the distinct characteristics of each type of defects,in-depth understanding of their roles in the thermoelectric transport process is of vital importance.In this paper,we classify and summarize the defect-related physical effects on both band structure and transport behavior of carriers and phonons when inducing different types of defects.Recent achievements in experimental characterization and theoretical simulation of defects are also summarized for accurately determining the type of defects serving for the design of thermoelectric materials.Finally,based on the current theoretical and experimental achievements,strategies engaged with multiple dimensional defects are reviewed for thermoelectric performance optimization.
出处
《Research》
EI
CAS
2020年第1期1898-1920,共23页
研究(英文)
基金
The authors wish to acknowledge the financial support from the National Key R&D Program of China(2018YFB0703602,2017YFA0303500)
the National Natural Science Foundation of China(21622107,U1832142,and 21805269)
the Key Research Program of Frontier Sciences(QYZDY-SSW-SLH011)
the Youth Innovation Promotion Association CAS(2016392)
the Fundamental Research Funds for the Central University(WK2340000094)
the Anhui Provincial Natural Science Foundation(1808085QA08)
the China Postdoctoral Science Foundation(2017M620261)
the National Synchrotron Radiation Laboratory Joint funds of University of Science and Technology of China(KY2060000156).