Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(lll) Substrate by Ion Beam Assisted Deposition

The(001)oriented yttria-stabilized zirconia(YSZ)Hlms with in-plane biaxial texture have been deposited on Si(111)substrates by ion beam assisted deposition at ambient temperature.The effects of ion/atom arrival rate fatio(R=(Ar^(+)+O2^(+))/ZrO_(2))and incident angle of bombarding ion beam on the Him texture development were investigated.It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1,9,but it was degraded with the further increase of R.The optimal in-plane biaxial texture,whose full width at half maximum of the(111)4>-scan spectrum is 14°,can be obtained at R=1.9 and incident angle of 55°.For a fixed R,the optimal crystallinity and in-plane biaxial alignment of the YSZ Hlms did not appear at the same incident angle and showed an opposite variation with the change of the incident angle from 51°to 55°.C-axis alignment(perpendicular to substrate surface)does not show any substantial variation with the change of incident angle within the range of 47°-56°.