摘要
Positron lifetime spectra were measured for the Zn-doped p-type GaAs.In comparing the horizontal-Bridgman-method-grown and the floating-zone-method grown p-type GaAs with the liquid-encapsulation-Czochralski-grown p-type GaAs samples,positron trapping into vacancy type defects was observed in the former two grown p-type GaAs.Shallow positron traps were detected,and the dominant ones were attributed to acceptor the in p-type GaAs.
基金
Supported by the National Natural Science Foundation of China under Grant No.69576020
the Natural Science Foundation of Hubei Province.
