基于微系统IPD工艺的功分网络制造技术

Manufacturing Technology of Power Divider Network Based on Microsystem IPD Process

集成无源器件(Integrated Passive Device,IPD)具有高集成度、高精度、高可靠性的优势,在射频微波领域极具应用前景,但薄膜多层电路及高精度电阻制作是限制其广泛应用的关键问题。文中基于IPD技术设计制作了毫米波Wilkinson带状线功率分配/合成器,通过薄膜多层技术实现了2层苯并环丁烯(BCB)介质、3层布线的多层结构,最小线宽和线距皆为20μm。通过反应磁控溅射方法在BCB介质表面制备了50Ω/□和100Ω/□的TaN高精度薄膜电阻。片上集成的功分网络的工作频率为30-40 GHz,频带内各个端口的回波损耗为-15dB,插入损耗为(4.6±0.2)dB。该研究突破了硅基薄膜多层高密度布线技术,制作了功分器并对其进行了测试,为射频微系统无源网络一体化集成提供了有效的解决方案。

Owing to the advantages of high integration,high precision and high reliability,the integratedpassive device(IPD)has great application potential in radio frequency(RF)microsystem field.However,thefabrication process of multi-layer thin film circuit and high accuracy resistor is the key restriction for wideapplication of IPD.In this paper a millimeter-wave Wilkinson stripline power divider/combiner is designedand fabricated based on IPD technique.A multi-layer film structure with 2 layers of BCB(benzocyclobutene)dielectric film and 3 layers of metallization film is realized by multi-layer thin film technology in fabricationprocess.The minimum line width and line space are both 20μm.The sheet resistances of TaN film integratedon the surface of BCB dielectric film using magnetron sputtering method are 50Ω/□and 100Ω/□.This powerdivider network operating at 30~40 GHz has a return loss of-15 dBand an insertion loss of(4.6±0.2)dB.This research makes a breakthrough in high-density multi-layer thin film manufacturing.A power dividerprototype is fabricated and tested.This research provides an effective solution for passive network integrationin RF microsystems.