摘要
Broadband light emission is obtained from a chirped multiple InAs/InGaAs/GaAs quantum dot(QD)structure.The thickness of the InGaAs strain-reducing layer(SRL)is used as the tuning parameter to adjust the light emission property of each QD layer in the chirped structure.It is shown from the photoluminescence(PL)measurement that the SRL thickness has a strong influence on the PL peak position,linewidth,and intensity.By constructing the chirped QD structure comprising five groups of QD layers with different SRL thicknesses,a broadband electroluminescence emission with the full width at half maximum of 202 nm is realized,indicating the feasibility of chirped multiple InAs QD layers on broadening the emission spectrum.
作者
LV Xue-Qin
JIN Peng
CHEN Hong-Mei
WU Yan-Hua
WANG Fei-Fei
WANG Zhan-Guo
吕雪芹;金鹏;陈红梅;吴艳华;王飞飞;王占国(Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University,Xiamen 361005)
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61274072,60976057 and 60876086
the Open Fund of Key Laboratory of Semiconductor Materials Science of Institute of Semiconductors,Chinese Academy of Sciences(No KLSMS-1105).
