Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer.The Ge buffer was deposited using a two-step chemical vapor deposition growth technique.The high quality Ge_(0.985)Sn_(0.015) layer was grown by solid source molecular beam epitaxy.Ge_(0.985)Sn_(0.015) pMOSFETs with Si surface passivation,TaN/HfO_(2) gate stack,and nickel stanogermanide[Ni(Ge_(1-x)Sn_(x))]source/drain were fabricated on the grown substrate.The device achieves an effective hole mobility of 182 cm^(2)/V·s at an inversion carrier density of 1×10^(13) cm^(-2).