摘要
InAs/GaSb type-II superlattices were grown on(100)GaSb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like(plane of mixed As and Sb atoms that connect the GaSb and InAs layers)interfaces.Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers.X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.
基金
by the National Natural Science Foundation of China under Grant Nos 50990064 and 60990315.
