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Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

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摘要 Few-layer graphene(FLG)is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2nm and the layer number is about 2–3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated𝛼α-SiC surface.
作者 KANG Chao-Yang TANG Jun LIU Zhong-Liang LI Li-Min YAN Wen-Sheng WEI Shi-Qiang XU Peng-Shou 康朝阳;唐军;刘忠良;李利民;闫文盛;韦世强;徐彭寿(National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029;School of Physics and Electronic Information,Huaibei Normal University,Huaibei 235000)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第11期236-238,共3页 中国物理快报(英文版)
基金 by the National Natural Science Foundation of China under Grant No 50872128 the Natural Science Foundation of Anhui Province(No 11040606M64) the Natural Science Foundation of Higher Education Institutions of Anhui Province(No KJ2010B189).
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