摘要
A novel silicon-on-insulator(SOI)high-voltage device of super-junction(SJ)lateral-double-diffused metal-oxide-semiconductor transistors(LDMOSTs)with T-dual dielectric buried layers(T-DBLs)is presented.The T-DBLs are formed by the first T-shaped dielectric layer and the second dielectric layer.A lot of holes are accumulated on the top interface of the second dielectric layer,which compensates for the charge imbalance of the surface N and P pillars,thus the substrate-assisted depletion(SAD)effect is eliminated in the new device.The electric field of the second dielectric buried layer,EI2,is enhanced by the interface charges,and the breakdown voltage Vbreakdown is increased.EI2=515 V/μm is obtained in the T-DBL SOI SJ.The Vbreakdown of the new device is increased from 124 V of the conventional SOI SJ to 302 V with a 15μm length drift region.The specific on-resistance(Ron,sp)of the T-DBL SOI SJ is only 0.00865Ω?cm2 and the FOM(FOM=V2breakdown/Ron,sp)is 10.54 MW/cm2.
作者
吴丽娟
章文通
张波
李肇基
WU Li-Juan;ZHANG Wen-Tong;ZHANG Bo;LI Zhao-Ji(College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054)
基金
Supported by the National Natural Science Foundation of China(No 61306094)
the Project of Sichuan Provincial Educa-tion Department(No 13ZA0089)
the Research Fund for the Middle and Youth Academic Leader of Chengdu University of Information Technology(No J201301).