摘要
InTiZnO thin-film transistors(ITZO TFTs)with Al_(2)O_(3)gate dielectrics are fabricated by magnetron sputtering at room temperature.The bottom-gate-type ITZO TFTs with amorphous Al_(2)O_(3)gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm^(2)/V·s,threshold voltage of 1.2 V,subthreshold swing of 94.5 mV/decade,and on/off-current ratio of 7×10^(6).We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.
作者
LIU Ao
LIU Guo-Xia
SHAN Fu-Kai
ZHU Hui-Hui
B.C.Shin
W.J.Lee
C.R.Cho
刘奥;刘国侠;单福凯;朱慧慧;B.C.Shin;W.J.Lee;C.R.Cho(College of Physics Science,Qingdao University,Qingdao 266071;Lab of New Fiber Materials and Modern Textile,Growing Base for State Key Laboratory,Qingdao University,Qingdao 266071;Electronic Ceramics Center,DongEui University,Busan 614714,South Korea;College of Nanoscience and Nanotechnology,Pusan National University,Busan 609735,South Korea)
基金
Supported by the Research Fund of DongEui University(2012AA189)
the Natural Science Foundation of Shandong Province under Grant Nos ZR2011FM010 and ZR2012FM020.
