摘要
A differential structure magnetic sensor is proposed.It is comprised of two new-type silicon magnetic sensitivity transistors(SMSTs)with similar characteristics and has a common emitter,two bases and two collectors.The sensor is fabricated by micro electromechanical system technology on a<100>high resistivity silicon wafer.At room temperature,when supply voltage VDD=10.0 V,all the base currents Ib1 of SMST1 and Ib2 of SMST2 equal 6.0 mA,the absolute magnetic sensitivity for the two SMSTs are 46.8 mV/kG and 56.1 mV/kG,respectively,and the absolute magnetic sensitivity for the sensor is 102.9 mV/kG.Meanwhile,the temperature coefficientαV of the collector output voltage of the sensor is 0.044%/℃.The experimental results show that the magnetic sensitivity and the temperature characteristics of the sensor can be improved and ameliorated compared with a single SMST.
基金
Supported by the National Natural Science Foundation of China under Grant No 61006057
the China Postdoctoral Science Foundation of China under Grant No 2013M530163
the Heilongjiang Postdoctoral Science Foundation under Grant No LBHZ12225
the Modern Sensor Technology Innovation Team for College of Heilongjiang Province under Grant No 2012TD007.
