摘要
An asymmetric Mach–Zehnder electro-optic modulator is demonstrated by using a silicon-based p-i-n diode embedded in compact 200µm long phase shifters.The measured figure of merit VπL=0.23 V⋅mm shows highly efficient modulation by the device,and an open eye−diagram at 3.2 Gbit/s confirmed its fast electro-optic response.Integrated with the grating coupler,the device exhibits a broad operational wavelength range of 70 nm with a uniform 18 dB extinction ratio covering the C−band and part L-band of optical communication.
作者
周亮
李智勇
肖希
徐海华
樊中朝
韩伟华
俞育德
余金中
ZHOU Liang;LI Zhi-Yong;XIAO Xi;XU Hai-Hua;FAN Zhong-Chao;HAN Wei-Hua;YU Yu-De;YU Jin-Zhong(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)
基金
by the National Natural Science Foundation of China under Grant No 60877036
the National Basic Research Program of China under Grant Nos 2006CB302803 and 2011CB301701.