摘要
It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed displays.Here,a self-confined inkjet printing technology has been developed to construct large-area(64×64 array),high-resolution and high-performance metal oxide bilayer(In_(2)O_(3)/IGZO)heterojunction TFTs with independent bottom gates on transparent glass substrates.Inkjet printing In_(2)O_(3) dot arrays with the diameters from 55 to 70μm and the thickness of~10 nm were firstly deposited on UV/ozone treated AlO_(x) dielectric layers,and then IGZO dots were selectively printed on the top of In_(2)O_(3) dots by self-confined technology to form In_(2)O_(3)/IGZO heterojunction channels.When the inkjet-printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films,the mobility of the resulting printed In_(2)O_(3)/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm^(2) V^(-1) s^(-1) with excellent on/off ratios(>10^(8))and negligible hysteresis.Furthermore,the printed N-Metal-Oxide-Semiconductor(NMOS)inverter consisted of an In_(2)O_(3)/IGZO TFT and an IGZO TFT has been demonstrated,which show excellent performance with the voltage gain up to 112.The strategy demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates,circuits and display driving circuits.
基金
This work was financially supported by the National Key R&D Program of“Strategic Advanced Electronic Materials”(No.2016YFB04011100)
the Basic Research Program of Jiangsu Province(Nos.BK20161263,SBK2017041510)
the Science and Technology Program of Guangdong Province(Nos.2016B090906002,2019B010924002)
the Basic Research Program of Suzhou Institute of Nanotech and Nano-bionics(No.Y5AAY21001)
the National Natural Science Foundation of China(Nos.61750110517,61805166)
the Cooperation Project of Vacuum Interconnect Nano X Research Facility(NANO-X)of Suzhou Nanotechnology and Nano-Bionics Institute(H060)。