摘要
GaN/Pb(Zr_(0.53) Ti_(0.47))O_(3) structures have been fabricated by light radiation heating low-pressure metal-organic chemical deposition and pulsed laser deposition. These structures show leakage current lower than 10-11 A at applied voltage of 5 V. X-ray diffraction shows that ferroelectric Pb(Zr_(0.53) Ti_(0.47))O_(3) films directly on GaN are well crystallized with perovskite structure. Because of the high thermal stability and relatively smaller mismatch between GaN and ferroelectrics in comparison with that of Si/ferroelectric structures, GaN looks like more promising as semiconductor active layer for metal-ferroelectric-semiconductor field effect transistors.
基金
Supported by the National Natural Science Foundation of China under Grant Nos.69976014,69636010,69987001 and 69806006
and the National High Technology Research&Development Project of China.
