摘要
Bandgap tuning of the InGaAsP/InP multiple quantum well(MQW)laser structure by the impurity-free vacancy diffusion(IFVD)is investigated using photoluminescence.It has been demonstrated that the effects of the plasma bombardment to the sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure.The reliability of the IFVD technique,particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer,has been discussed.
作者
HAN De-Jun
NIU Jia-Sheng
ZHU Hong-Liang
ZHU Hong-Qing
ZHUANG Wan-Ru
韩德俊;朱家胜;朱红青;朱洪亮;庄婉如(Key Laboratory in University for Radiation Beam Technology and Materials Modification,Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875 and Beijing Radiation Center,Beijing 100875;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)
基金
Supported by the National Natural Science Foundation of China under Grant No.69786001
“New Star”program for science and technology in Beijing(Contract No.952870300).
