摘要
Unique experimental phenomena are discovered in a large gap semiinsulating(SI)GaAs photoconductive semiconductor switch(PCSS)and the peculiar transmission characteristics are exhibited in the experiment.The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS.By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS,a detailed statistical analysis and theoretical explanations are expounded.The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation(LSA)mode when the conditions of 5×10^(4) s⋅cm^(−3)≤n0/f≤3×10^(5) s⋅cm^(−3) and n0 L≥10^(13) cm^(−2) must be met in the switch,with n0 being carrier concentration and f the frequency.The large gap SI-GaAs PCSS we developed has not shown the nonlinear(lock-in)behavior at high bias voltage,so the withstand voltage and service life for PCSS are improved.
作者
SHI Wei
MA Xiang-Rong
施卫;马湘蓉(Department of Applied Physics,Xi'an University of Technology,Xi'an 710048;Institute of Physics and Electionic Enginerting,Xinjiang Normal University,Urumqi 830054)
基金
Supported by the National Natural Science Foundation of China under Grant Nos 50837005 and 10876026
the State Key Laboratory of Transient Optics and Photonics,Chinese Academy of Sciences(SKLST201001).
