摘要
The quantum yield formula for uniform-doping GaAIAs/GaAs transmission-mode photocathodes is revised by taking into account the light absorption in the window layer.By using the revised quantum yield formula,the domestic and ITT's experimental quantum yield curves are fitted and the fitted curves match well with the experimental curves.In addition,the fit results show that the integral sensitivity and quantum yield of domestic image intensifier tube has achieved 2130μA/lm and 45%,nearly reaching ITT's third generation level in 2002,whereas the discrepancy in cathode performance is mainly embodied in the electron diffusion length and back interface recombination velocity.
作者
石峰
张益军
程宏昌
赵静
熊雅娟
常本康
SHI Feng;ZHANG Yi-Jun;CHENG Hong-Chang;ZHAO Jing;XIONG Ya-Juan;CHANG Ben-Kang(Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology,Nanjing 210094;North Night Vision Technology Group Co.,LTD,Xi’an 710056;Key Laboratory of Low Light Level Technology of COSTIND,Xi’an 710065)
基金
Supported by the National Natural Science Foundation of China under Grant Nos 10794125,60808006,60821004,61078051 and 60978017.
