摘要
Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate.Dark-current densities of 7.2×10^(-7)A/cm^(2) at 0 V and 3.6×10^(-4)A/cm^(2) at-5 V,a high quantum efficiency of 74.4%at 1546nm,and a 3-dB bandwidth up to 12GHz are achieved.The full width at half maximum of the detector is about 16nm.Furthermore,through thermal tuning,the peak wavelength red shifts from 1527nm to 1544 nm,and a tuning range of 17nm is realized without fabricating extra tuning electrodes.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60876039 and 61176053
the Hi-Tech Research and Development Program of China(863 Program)under Grant No 2009AA03Z404
the National Basic Research Program of China(973 Program)under Grant No 2010CB327601.
