摘要
ZnO:Ag films were prepared by rf sputtering on Si substrates.A detailed study on as-grown and annealed films was carried out using x-ray diffraction(XRD).The results indicate that the film crystalline quality and the Ag doping efficiency were both influenced by oxygen in the sputtering and annealing atmosphere.The optimum conditions are found.Ultraviolet and green emissions of annealed ZnO:Ag films were observed at room temperature.Photoluminescence results show that oxygen in annealing atmosphere reduces the deep-level defects in ZnO:Ag and increases the film quality.
作者
段理
高唯
DUAN Li;GAO Wei(School of Materials Science and Engineering,Chang’an University,Xi’an 710064;Department of Chemical and Materials Engineering,The University of Auckland,Private Bag 92019,Auckland,New Zealand)
