Hydrogenic-Donor Impurity States in GaAs/Al xGa 1−xAs Quantum Dots in the Presence of an Electric Field

We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials,in the presence of a uniform electric field applied parallel to the dot axis.The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii,then begins to drop quickly.Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position,dot thickness and applied electric field are also presented.